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Written by Jennifer Shuttleworth
Infineon Technologies AG (Munich, Germany) has expanded its 1200-V discrete IGBT product portfolio by offering up to 75 A. The devices are co-packed with a full-rated diode in a TO-247PLUS package. The new TO-247PLUS 3-pin and 4-pin packages serve the growing demand for higher power density and highest efficiency in discrete packages. Typical applications with a blocking voltage of 1200 V requiring high power density are drives, photovoltaic and uninterruptible power supplies; additional applications include battery charging and energy storage systems. Compared to a regular TO-247-3 package, the company says the new TO-247PLUS package can provide double current rating. TO-247PLUS" 4-pin package features an extra Kelvin emitter source pin, allowing for an ultra-low inductance gate-emitter control loop.
Date written: 14-Jun-2017 12:07 EDT
More of this article on the SAE International Website
ID: 8141
Infineon Technologies AG (Munich, Germany) has expanded its 1200-V discrete IGBT product portfolio by offering up to 75 A. The devices are co-packed with a full-rated diode in a TO-247PLUS package. The new TO-247PLUS 3-pin and 4-pin packages serve the growing demand for higher power density and highest efficiency in discrete packages. Typical applications with a blocking voltage of 1200 V requiring high power density are drives, photovoltaic and uninterruptible power supplies; additional applications include battery charging and energy storage systems. Compared to a regular TO-247-3 package, the company says the new TO-247PLUS package can provide double current rating. TO-247PLUS" 4-pin package features an extra Kelvin emitter source pin, allowing for an ultra-low inductance gate-emitter control loop.
Date written: 14-Jun-2017 12:07 EDT
More of this article on the SAE International Website
ID: 8141
