High-voltage superjunction MOSFET

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Written by Jennifer Shuttleworth
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The 600-v CoolMOS CFD7 from Infineon Technologies AG (Munich,Germany) is the latest high-voltage superjunction MOSFET technology, completing the CoolMOS 7 series. This new MOSFET addresses the high power SMPS (switched-mode powersupply) market for resonant topologies. According to Infineon, the device offersindustry-leading efficiency and reliability in soft switching topologies likeLLC and ZVSPSFB (zero-switching voltage phase-shifted full-bridge). It is suitable for high power SMPS applications such as EV chargingstations, servers and telecom equipment power. Succeeding the CoolMOS CFD2, thenew MOSFET is up to 1.45% more efficient than its predecessor or competitorofferings, according to the company. It combines all of the advantages of a fast switching technologywith high commutation ruggedness, without impacting the easy implementation inthe design-in process. The 600-v CoolMOS CFD7 features reduced gate charge(Q g) and improved turn-off behavior. Additionally, it has a reverserecovery charge (Q rr). 



Date written: 05-Jan-2018 03:23 EST

More of this article on the SAE International Website

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